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2N5116

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2N5116

Transistor Polarity : P-Channel

Vgs - Gate-Source Breakdown Voltage : 30 V

Product Category : JFET

Mounting Style : Through Hole

Pd - Power Dissipation : 500 mW

Package / Case : TO-18-3

Maximum Operating Temperature : + 200 C

Vds - Drain-Source Breakdown Voltage : 30 V

Id - Continuous Drain Current : - 500 pA

Rds On - Drain-Source Resistance : 175 Ohms

Manufacturer : Microsemi

Description : JFET JFET

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The 2N5116,from Microsemi,is JFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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