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CSD19532KTTT

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CSD19532KTTT

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.2V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Gate Charge (Qg) (Max) @ Vgs : 57 nC @ 10 V

Rds On (Max) @ Id, Vgs : 5.6mOhm @ 90A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 5060 pF @ 50 V

Mounting Type : Surface Mount

Series : NexFET™

Supplier Device Package : DDPAK/TO-263-3

Mfr : Texas Instruments

Current - Continuous Drain (Id) @ 25°C : 200A (Ta)

Power Dissipation (Max) : 250W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : CSD19532

Description : MOSFET N-CH 100V 200A DDPAK

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N-Channel 100 V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3

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