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TK39N60W5,S1VF

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TK39N60W5,S1VF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.5V @ 1.9mA

Operating Temperature : 150°C (TJ)

Package / Case : TO-247-3

Gate Charge (Qg) (Max) @ Vgs : 135 nC @ 10 V

Rds On (Max) @ Id, Vgs : 74mOhm @ 19.4A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 600 V

Vgs (Max) : ±30V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 4100 pF @ 300 V

Mounting Type : Through Hole

Series : DTMOSIV

Supplier Device Package : TO-247

Mfr : Toshiba Semiconductor and Storage

Current - Continuous Drain (Id) @ 25°C : 38.8A (Ta)

Power Dissipation (Max) : 270W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : TK39N60

Description : MOSFET N-CH 600V 38.8A TO247

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N-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-247

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