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SIHB30N60E-GE3

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SIHB30N60E-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs : 130 nC @ 10 V

Rds On (Max) @ Id, Vgs : 125mOhm @ 15A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 600 V

Vgs (Max) : ±30V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 2600 pF @ 100 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : D²PAK (TO-263)

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 29A (Tc)

Power Dissipation (Max) : 250W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SIHB30

Description : MOSFET N-CH 600V 29A D2PAK

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N-Channel 600 V 29A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

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