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TRS6E65F,S1Q

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TRS6E65F,S1Q

Category : Discrete Semiconductor Products Diodes Rectifiers Single Diodes

Product Status : Active

Current - Reverse Leakage @ Vr : 30 µA @ 650 V

Mounting Type : Through Hole

Voltage - Forward (Vf) (Max) @ If : 1.6 V @ 6 A

Package : Tube

Series : -

Capacitance @ Vr, F : 22pF @ 650V, 1MHz

Supplier Device Package : TO-220-2L

Reverse Recovery Time (trr) : 0 ns

Mfr : Toshiba Semiconductor and Storage

Technology : SiC (Silicon Carbide) Schottky

Operating Temperature - Junction : 175°C (Max)

Package / Case : TO-220-2

Voltage - DC Reverse (Vr) (Max) : 650 V

Current - Average Rectified (Io) : 6A

Speed : No Recovery Time > 500mA (Io)

Base Product Number : TRS6E65

Description : DIODE SIL CARB 650V 6A TO220-2L

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Diode 650 V 6A Through Hole TO-220-2L

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